* Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
* SiC Parallel Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient
APTM120U10SCAVG Datasheet (527.50 KB)
APTM120U10SCAVG
527.50 KB
Single switch.
APTM120U10SCAVG Single switch Series & SiC parallel diodes MOSFET Power Module VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C D D.
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