APTM120U10SCAVG Overview
APTM120U10SCAVG Single switch Series & SiC parallel diodes MOSFET Power Module VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C D DK G SK S G, SK and DK terminals are for control signals only (not for power) DK S D SK G Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control.
APTM120U10SCAVG Key Features
- Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
- SiC Parallel Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
