APTM120U100D-ALN Overview
Single switch with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 100mΩ max @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Zero Current Switching resonant mode Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance .. S D SK G Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case
APTM120U100D-ALN Key Features
- Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
- Kelvin source for easy drive
- Very low stray inductance
- Symmetrical design
- M5 power connectors