APTM120U10SCAVG Overview
APTM120U10SCAVG Single switch Series & SiC parallel diodes MOSFET Power Module VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C D G, SK and DK terminals are for control signals only (not for power) DK S D SK G Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • SiC Parallel Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • Kelvin source for easy drive • Kelvin drain for voltage monitoring • Very low stray inductance - Symmetrical design - M5 power connectors - M3 power connectors • High level of integration • AlN substrate for improved MOSFET thermal performance Benefits •...
APTM120U10SCAVG Key Features
- Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
- SiC Parallel Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
