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APTM120U10SCAVG - Single switch

Key Features

  • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged.
  • SiC Parallel Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF.
  • Kelvin source for easy drive.
  • Kelvin drain for voltage monitoring.
  • Very low stray inductance - Symmetrical design - M5 power connectors - M3 power connectors.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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APTM120U10SCAVG Single switch Series & SiC parallel diodes MOSFET Power Module VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C D DK G SK S G, SK and DK terminals are for control signals only (not for power) DK S D SK G Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • SiC Parallel Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • Kelvin source for easy drive • Kelvin drain for voltage monitoring • Very low stray inductance - Symmetrical design - M5 power connectors - M