CD486B Datasheet | Microsemi

12 MILS 24 MILS - GENERAL PURPOSE SILICON DIODES - ALL JUNCTIONS PLETELY PROTECTED WITH SILICON DIOXIDE - PATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES EXCEPT SOLDER REFLOW MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE CD483B CD485B CD486B CD645 CD5194 CD5195 CD5196 V(pk) 80 180 250 270 80 180 250 VRWM V(pk) 70 180 225 225 70 180 225 I O I O IFSM TA=+150°C tp = 1/120 S TA=25°C m A m A 200 50 200 50 200 50 400 150 200 50 200 50 200 50 2 2 2 5 2 2 2 TYPE CD483B CD485B CD486B CD645 CD5194 CD5195 CD5196 VF(1) V dc - 1.0 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 IR1 at VRWM IR2 at VRM IR3 at VRWM TA+25°C TA+25°C TA+150°C n A dc 25 25 25 50 25 25 25 µA µA dc 100 5 100 5 100 5 50 25 100 5 100 5 100 5 CAP @VR =4V p F - -...