NXP Semiconductors 1N5819
The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology.| Part No. | 1N5819 |
|---|---|
| Datasheet | 1N5819 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Schottky barrier diodes |
| Buy | Stock & Price |
FEATURES
● Low switching losses● Fast recovery time
● Guard ring protected
● Hermetically sealed leaded glass package.
APPLICATIONS
● Low power, switched-mode power supplies● Rectifying
● Polarity protection. handbook, 4 columns 1N5817; 1N5818; 1N5819
DESCRIPTION
(1) Implotec is a trademark of Philips. k a MAM218 Fig.1 Simplified outline (SOD81) and symbol. 1996 May 03 2 Philips Semiconductors Product specification Schottky barrier diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR 1N5817 1N5818 1N5819 VRSM non-repetitive peak reverse voltage 1N5817 1N5818 1N5819 VRRM repetitive peak reverse voltage 1N5817 1N5818 1N5819 VRWM crest working reverse voltage 1N5817 1N5818 1N5819 IF(AV) IFSM average forward current non-repetitive peak forward current PARAMETER continuous reverse voltage 1N5817; 1N5818; 1N5819 CONDITIONS − − − − − − − − − − − − Tamb = 55 °C; Rth j-a = 100 K/W; note 1; VR(equiv) = 0.2 V; note 2 t = 8.3 ms half sine wave; JEDEC method; Tj = Tj max prior to surge: VR = 0 − − MIN.
