1N5819WT - Plastic-Encapsulate Diodes

Key Features

Low Forward Voltage Drop.
Guard Ring Construction for Transient Protection.
Low Reverse Recovery Time.
Low Reverse Capacitance.

1N5819WT plastic-encapsulate diodes by Slkor - Datasheet Preview

Datasheet Details

Part number	1N5819WT
Manufacturer	Slkor
File Size	488.85 KB
Description	Plastic-Encapsulate Diodes
Datasheet	1N5819WT Datasheet

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Full PDF Text Transcription (Reference)

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Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE FEATURES  Low Forward Voltage Drop  Guard Ring Construction for Transient Protection  Low Reverse Recovery Time  Low Reverse Capacitance MARKING: S4 S4 1N5819WT SOD-523 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM Peak Repetitive Reverse Voltage VRWM Working Peak Reverse Voltage VR DC Blocking Voltage VR(RMS) RMS Reverse Voltage IFM Forward Continuous Current IFSM Non-Repetitive Peak Forward Surge Current@t=8.