1N5819WS
Key Features
- Metal silicon junction, majority carrier conduction
- Guarding for overvoltage protection
- Low power loss, high efficiency
- High current capability
- low forward voltage drop
- High surge capability
- Part: 1N5819WS
- Description: SCHOTTKY BARRIER RECTIFIERS
- Manufacturer: Jingdao Microelectronics
- Size: 116.86 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 1N5819W | Kexin Semiconductor | Schottky Barrier Diodes |
| 1N5819W | Sangdest Microelectronics | SCHOTTKY BARRIER DIODE |
| 1N5819 | AiT Components | SCHOTTKY DIODES |
| 1N5819 | International Rectifier | SCHOTTKY RECTIFIER |
| 1N5819-1 | Sensitron | SCHOTTKY BARRIER DIODE |
| 1N5819UR-1 | Sensitron | SCHOTTKY BARRIER DIODE |
| 1N5819HW1 | Diodes Incorporated | SUPER BARRIER RECTIFIER |
| 1N5819 | Kingtronics | PLASTIC SCHOTTKY BARRIER RECTIFIER |
| 1N5819 | EIC Semiconductor | SCHOTTKY BARRIER RECTIFIER DIODES |
| 1N5818W | Sangdest Microelectronics | SCHOTTKY BARRIER DIODE |