• Part: 1N5818WS
  • Manufacturer: Jingdao Microelectronics
  • Size: 116.86 KB
Download 1N5818WS Datasheet PDF
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1N5818WS Description

1 Cathode 2 Anode 2 1 Top View Marking Code: B5817WS---SJ B5818WS---SK B5819WS---SL Simplified outline SOD-323 and symbol Maximum Ratings and Ratings at 25 °C ambient temperature unless otherwise specified. Parameter Symbols B5817WS B5818WS B5819WS Units Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum DC Blocking Voltage VRRM 20 30 40 V VRMS 14 21.

1N5818WS Key Features

  • Metal silicon junction, majority carrier conduction
  • Guarding for overvoltage protection
  • Low power loss, high efficiency
  • High current capability
  • low forward voltage drop
  • High surge capability
  • For use in low voltage, high frequency inverters, free wheeling, and polarity protection