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1N5817WS

Manufacturer: Jingdao Microelectronics
1N5817WS datasheet preview

Datasheet Details

Part number 1N5817WS
Datasheet 1N5817WS-JingdaoMicroelectronics.pdf
File Size 116.86 KB
Manufacturer Jingdao Microelectronics
Description SCHOTTKY BARRIER RECTIFIERS
1N5817WS page 2 1N5817WS page 3

1N5817WS Overview

1 Cathode 2 Anode 2 1 Top View Marking Code: B5817WS---SJ B5818WS---SK B5819WS---SL Simplified outline SOD-323 and symbol Maximum Ratings and Ratings at 25 °C ambient temperature unless otherwise specified. Parameter Symbols B5817WS B5818WS B5819WS Units Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum DC Blocking Voltage VRRM 20 30 40 V VRMS 14 21.

1N5817WS Key Features

  • Metal silicon junction, majority carrier conduction
  • Guarding for overvoltage protection
  • Low power loss, high efficiency
  • High current capability
  • low forward voltage drop
  • High surge capability
  • For use in low voltage, high frequency inverters, free wheeling, and polarity protection

1N5817WS from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
SEMTECH Logo 1N5817WS 1A Surface Mount Schottky Barrier Diode SEMTECH
Kexin Logo 1N5817WS Schottky Diodes Kexin
Dc Components Logo 1N5817WS SURFACE MOUNT SCHOTTKY BARRIER DIODES Dc Components
CHINA BASE 1N5817W 1A Surface Mount Schottky Barrier Diode CHINA BASE
JGD Logo 1N5817W Surface Mount Schottky Barrier Rectifiers JGD

More Datasheets from Jingdao Microelectronics

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Part Number Description
1N5818WS SCHOTTKY BARRIER RECTIFIERS
1N5819WS SCHOTTKY BARRIER RECTIFIERS

1N5817WS Distributor

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