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1N5817W - SCHOTTKY BARRIER DIODE

Key Features

  • Metal silicon junction, majority carrier conduction.
  • Guarding for overvoltage protection.
  • Low power loss, high efficiency.
  • High current capability.
  • Low forward voltage drop.
  • High surge capability.
  • For use in low voltage, high frequency inverters, free wheeling, and polarity protection.

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Datasheet Details

Part number 1N5817W
Manufacturer Sangdest Microelectronics
File Size 125.40 KB
Description SCHOTTKY BARRIER DIODE
Datasheet download datasheet 1N5817W Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • Low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Mechanical Data: • Case: SOD-123FL molded plastic body • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: Color band denotes cathode end • Mounting Position: Any Mechanical Dimensions: In mm/Inches 1N5817W-1N5819W Green Products Symbol A B C D E G Millimeters Min Max 3.55 3.85 2.60 2.90 1.75 1.95 0.90 1.40 0.70 1.20 0.25 - Inches Min Max 0.140 0.152 0.102 0.114 0.