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1N5817W Datasheet Schottky Barrier Diode

Manufacturer: Sangdest Microelectronics

Overview: Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER.

1N5817W datasheet preview

Datasheet Details

Part number	1N5817W
Manufacturer	Sangdest Microelectronics
File Size	125.40 KB
Description	SCHOTTKY BARRIER DIODE
Datasheet	1N5817W-SangdestMicroelectronics.pdf

Key Features

Metal silicon junction, majority carrier conduction.
Guarding for overvoltage protection.
Low power loss, high efficiency.
High current capability.
Low forward voltage drop.
High surge capability.
For use in low voltage, high frequency inverters, free wheeling, and polarity protection.

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