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1N5817W - Schottky Barrier Diodes

General Description

PIN DESCRIPTION 1 Cathode 2 Anode Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Forward Voltage @ IF=1A Forward Voltage @ IF=3.1A Average Forward Rectified Current @ TL=90ć Non-Repetitive Peak Forward Surge Current @8.3ms Reverse Vol

Key Features

  • ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward voltage drop ƽ High Surge Capability SOD-123F 1 2 Top View PIN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type Schottky Diodes 1N5817W ~ 1N5819W TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward voltage drop ƽ High Surge Capability SOD-123F 1 2 Top View PIN DESCRIPTION PIN DESCRIPTION 1 Cathode 2 Anode Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Forward Voltage @ IF=1A Forward Voltage @ IF=3.1A Average Forward Rectified Current @ TL=90ć Non-Repetitive Peak Forward Surge Current @8.3ms Reverse Voltage Leakage Current Typical Junction Capacitance Junction Temperature Storage Temperature range Ta = 25ć Ta = 100ć Symbol VRRM VRMS VDC VF IFAV IFSM IR CJ TJ Tstg 1N5817W 20 14 20 0.45 0.75 1N5818W 30 21 30 0.55 0.875 1 25 1 10 110 125 -55 to 125 1N5819W 40 28 40 0.