1N5817W Datasheet (CHINA BASE)

Part 1N5817W
Description 1A Surface Mount Schottky Barrier Diode
Category Diode
Manufacturer CHINA BASE
Size 117.96 KB
Pricing from 0.0525 USD, available from Onlinecomponents.com and Master Electronics.
CHINA BASE

1N5817W Overview

Key Specifications

Max Operating Temp: 125 °C
Min Operating Temp: -55 °C

Description

Cathode Anode 2 Parameter Reverse Voltage 1N5817W 1N5818W 1N5819W Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) Power Dissipation Operating Temperature Range Storage Temperature Range Top View Marking Code: 1N5817W: SJ 1N5818W: ME 1N5819W: SL Simplified outline SOD-123 and symbol Symbol VR IF(AV) IFSM Ptot Tj Tstg Value 20 30 40 1 9 450 - 55 to + 125 - 55 to + 125 Unit V A A mW OC OC Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 1 mA Reverse Current at VR = 20 V at VR = 30 V at VR = 40 V at VR = 4 V at VR = 6 V Forward Voltage at IF = 0.1 A at IF = 1 A at IF = 3 A Total Capacitance at VR = 4 V, f = 1 MHz 1N5817W 1N5818W 1N5819W 1N5817W 1N5818W 1N5819W 1N5819W 1N5819W 1N5819W 1N5817W 1N5818W 1N5819W 1N5817W 1N5818W 1N5819W Symbol V (BR)R IR VF Ctot Min.

Price & Availability

Seller Inventory Price Breaks Buy
Onlinecomponents.com 0 12000+ : 0.0525 USD
36000+ : 0.0432 USD
60000+ : 0.043 USD
108000+ : 0.0428 USD
View Offer
Master Electronics 0 12000+ : 0.0525 USD
36000+ : 0.0432 USD
60000+ : 0.043 USD
108000+ : 0.0428 USD
View Offer