1N5817W is 1A Surface Mount Schottky Barrier Diode manufactured by CHINA BASE.
| Manufacturer | Part Number | Description |
|---|---|---|
JGD |
1N5817W | Surface Mount Schottky Barrier Rectifiers |
Kexin Semiconductor |
1N5817W | Schottky Barrier Diodes |
SEMTECH |
1N5817W | Surface Mount Schottky Barrier Rectifier |
Sangdest Microelectronics |
1N5817W | SCHOTTKY BARRIER DIODE |
Rectron |
1N5817W | SCHOTTKY BARRIER RECTIFIER |
Cathode Anode 2 Ratings (Ta = 25 OC) Parameter Reverse Voltage 1N5817W 1N5818W 1N5819W Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) Power Dissipation Operating Temperature Range Storage Temperature Range Top View Marking Code:.
