Datasheet Details
| Part number | 1N5818W |
|---|---|
| Manufacturer | CHINA BASE |
| File Size | 117.96 KB |
| Description | 1A Surface Mount Schottky Barrier Diode |
| Datasheet | 1N5818W 1N5817W Datasheet (PDF) |
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Overview: 1N5817W-1N5819W 1A Surface Mount Schottky Barrier Diode PINNING PIN 1.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 1N5818W |
|---|---|
| Manufacturer | CHINA BASE |
| File Size | 117.96 KB |
| Description | 1A Surface Mount Schottky Barrier Diode |
| Datasheet | 1N5818W 1N5817W Datasheet (PDF) |
|
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Cathode Anode 2 Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage 1N5817W 1N5818W 1N5819W Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) Power Dissipation Operating Temperature Range Storage Temperature Range Top View Marking Code: 1N5817W: SJ 1N5818W: ME 1N5819W: SL Simplified outline SOD-123 and symbol Symbol VR IF(AV) IFSM Ptot Tj Tstg Value 20 30 40 1 9 450 - 55 to + 125 - 55 to + 125 Unit V A A mW OC OC Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 1 mA Reverse Current at VR = 20 V at VR = 30 V at VR = 40 V at VR = 4 V at VR = 6 V Forward Voltage at IF = 0.1 A at IF = 1 A at IF = 3 A Total Capacitance at VR = 4 V, f = 1 MHz 1N5817W 1N5818W 1N5819W 1N5817W 1N5818W 1N5819W 1N5819W 1N5819W 1N5819W 1N5817W 1N5818W 1N5819W 1N5817W 1N5818W 1N5819W Symbol V (BR)R IR VF Ctot Min.
20 30
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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1N5818W | Surface Mount Schottky Barrier Rectifiers | JGD |
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1N5818W | Schottky Barrier Diodes | Kexin |
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1N5818W | Surface Mount Schottky Barrier Rectifier | SEMTECH |
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1N5818W | SCHOTTKY BARRIER DIODE | Sangdest Microelectronics |
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1N5818W | SCHOTTKY BARRIER RECTIFIER | Rectron |
| Part Number | Description |
|---|---|
| 1N5817W | 1A Surface Mount Schottky Barrier Diode |
| 1N5819W | 1A Surface Mount Schottky Barrier Diode |