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1N5818W - 1A Surface Mount Schottky Barrier Diode

Download the 1N5818W datasheet PDF. This datasheet also covers the 1N5817W variant, as both devices belong to the same 1a surface mount schottky barrier diode family and are provided as variant models within a single manufacturer datasheet.

General Description

Cathode Anode 2 Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage 1N5817W 1N5818W 1N5819W Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) Power Dissipation Operating Temperature Range Storage Temperature Range Top View

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Note: The manufacturer provides a single datasheet file (1N5817W-CHINABASE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N5818W
Manufacturer CHINA BASE
File Size 117.96 KB
Description 1A Surface Mount Schottky Barrier Diode
Datasheet download datasheet 1N5818W Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1N5817W-1N5819W 1A Surface Mount Schottky Barrier Diode PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage 1N5817W 1N5818W 1N5819W Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) Power Dissipation Operating Temperature Range Storage Temperature Range Top View Marking Code: 1N5817W: SJ 1N5818W: ME 1N5819W: SL Simplified outline SOD-123 and symbol Symbol VR IF(AV) IFSM Ptot Tj Tstg Value 20 30 40 1 9 450 - 55 to + 125 - 55 to + 125 Unit V A A mW OC OC Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 1 mA Reverse Current at VR = 20 V at VR = 30 V at VR = 40 V at VR = 4 V at VR = 6 V Forward Voltage at IF = 0.