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1N5818W Datasheet Schottky Barrier Diodes

Manufacturer: Kexin Semiconductor

Overview: SMD Type Schottky Diodes 1N5817W ~ 1N5819W TransDisiotodress.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

PIN DESCRIPTION 1 Cathode 2 Anode Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Forward Voltage @ IF=1A Forward Voltage @ IF=3.1A Average Forward Rectified Current @ TL=90ć Non-Repetitive Peak Forward Surge Current @8.3ms Reverse Voltage Leakage Current Typical Junction Capacitance Junction Temperature Storage Temperature range Ta = 25ć Ta = 100ć Symbol VRRM VRMS VDC VF IFAV IFSM IR CJ TJ Tstg 1N5817W 20 14 20 0.45 0.75 1N5818W 30 21 30 0.55 0.875 1 25 1 10 110 125 -55 to 125 1N5819W 40 28 40 0.6 0.9 Unit V A mA pF ć Ƶ Marking NO.

Marking 1N5817W 12A 1N5818W 13A 1N5819W 14A www.kexin.com.cn 1 SMD Type TransDisiotodress Average Forward Current (A) Schottky Diodes 1N5817W

Key Features

  • ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward voltage drop ƽ High Surge Capability SOD-123F 1 2 Top View PIN.

1N5818W Distributor

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