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1N5818W - Schottky Barrier Diodes

Download the 1N5818W datasheet PDF. This datasheet also covers the 1N5817W variant, as both devices belong to the same schottky barrier diodes family and are provided as variant models within a single manufacturer datasheet.

General Description

PIN DESCRIPTION 1 Cathode 2 Anode Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Forward Voltage @ IF=1A Forward Voltage @ IF=3.1A Average Forward Rectified Current @ TL=90ć Non-Repetitive Peak Forward Surge Current @8.3ms Reverse Vol

Key Features

  • ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward voltage drop ƽ High Surge Capability SOD-123F 1 2 Top View PIN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N5817W-Kexin.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
1N5818W 1A Surface Mount Schottky Barrier Diode CHINA BASE
1N5818W Surface Mount Schottky Barrier Rectifiers JGD
1N5818W Surface Mount Schottky Barrier Rectifier SEMTECH
1N5818W SCHOTTKY BARRIER DIODE Sangdest Microelectronics
1N5818W SCHOTTKY BARRIER RECTIFIER Rectron

Other Datasheets by Kexin Semiconductor

Part Number Description
1N5818WS Schottky Diodes
1N5818 Schottky Barrier Rectifier Diodes
1N5817 Schottky Barrier Rectifier Diodes
1N5817W Schottky Barrier Diodes
1N5817WS Schottky Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Schottky Diodes 1N5817W ~ 1N5819W TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward voltage drop ƽ High Surge Capability SOD-123F 1 2 Top View PIN DESCRIPTION PIN DESCRIPTION 1 Cathode 2 Anode Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Forward Voltage @ IF=1A Forward Voltage @ IF=3.1A Average Forward Rectified Current @ TL=90ć Non-Repetitive Peak Forward Surge Current @8.3ms Reverse Voltage Leakage Current Typical Junction Capacitance Junction Temperature Storage Temperature range Ta = 25ć Ta = 100ć Symbol VRRM VRMS VDC VF IFAV IFSM IR CJ TJ Tstg 1N5817W 20 14 20 0.45 0.75 1N5818W 30 21 30 0.55 0.875 1 25 1 10 110 125 -55 to 125 1N5819W 40 28 40 0.