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1N5818WS - Schottky Diodes

Download the 1N5818WS datasheet PDF. This datasheet also covers the 1N5817WS variant, as both devices belong to the same schottky diodes family and are provided as variant models within a single manufacturer datasheet.

General Description

PIN DESCRIPTION 1 Cathode 2 Anode Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Forward Voltage @ IF=1A Forward Voltage @ IF=3.1A Average Forward Rectified Current @ TL=90ć Non-Repetitive Peak Forward Surge Current @8.3ms Reverse Vol

Key Features

  • ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward voltage drop ƽ High Surge Capability SOD-323F 12 Top View PIN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N5817WS-Kexin.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Schottky Diodes 1N5817WS ~ 1N5819WS TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward voltage drop ƽ High Surge Capability SOD-323F 12 Top View PIN DESCRIPTION PIN DESCRIPTION 1 Cathode 2 Anode Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Forward Voltage @ IF=1A Forward Voltage @ IF=3.1A Average Forward Rectified Current @ TL=90ć Non-Repetitive Peak Forward Surge Current @8.3ms Reverse Voltage Leakage Current Typical Junction Capacitance Junction Temperature Storage Temperature range Ta = 25ć Ta = 100ć Symbol VRRM VRMS VDC VF IFAV IFSM IR CJ TJ Tstg 1N5817WS 1N5818WS 1N5819WS 20 30 40 14 21 28 20 30 40 0.45 0.55 0.6 0.75 0.875 1 0.