1N5818W Overview
Key Features
- Metal silicon junction, majority carrier conduction
- Guarding for overvoltage protection
- Low power loss, high efficiency
- High current capability
- Low forward voltage drop
| Part | 1N5818W |
|---|---|
| Description | SCHOTTKY BARRIER DIODE |
| Category | Diode |
| Manufacturer | Sangdest Microelectronics |
| Size | 125.40 KB |
Pricing from 0.0362 USD, available from Onlinecomponents.com and Master Electronics.
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Onlinecomponents.com | 0 | 12000+ : 0.0362 USD 36000+ : 0.0352 USD 60000+ : 0.0343 USD 108000+ : 0.0326 USD |
View Offer |
| Master Electronics | 0 | 12000+ : 0.0362 USD 36000+ : 0.0352 USD 60000+ : 0.0343 USD 108000+ : 0.0326 USD |
View Offer |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 1N5818WS | Jingdao Microelectronics | SCHOTTKY BARRIER RECTIFIERS |
| 1N5818W | Kexin Semiconductor | Schottky Barrier Diodes |
| 1N5818WS | SEMTECH | 1A Surface Mount Schottky Barrier Diode |
| 1N5818WS | Dc Components | SURFACE MOUNT SCHOTTKY BARRIER DIODES |
| 1N5818W | EIC Semiconductor | SCHOTTKY BARRIER RECTIFIER DIODE |