1N5818W Datasheet Schottky Barrier Diode

Manufacturer: Sangdest Microelectronics

Overview: Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Metal silicon junction, majority carrier conduction.
Guarding for overvoltage protection.
Low power loss, high efficiency.
High current capability.
Low forward voltage drop.
High surge capability.
For use in low voltage, high frequency inverters, free wheeling, and polarity protection.

Brand Logo	Part Number	Description	Manufacturer
CHINA BASE	1N5818W	1A Surface Mount Schottky Barrier Diode	CHINA BASE
	1N5818W	Surface Mount Schottky Barrier Rectifiers	JGD
	1N5818W	Schottky Barrier Diodes	Kexin
	1N5818W	Surface Mount Schottky Barrier Rectifier	SEMTECH
	1N5818W	SCHOTTKY BARRIER RECTIFIER	Rectron