• Part: 1N5819W
  • Description: SCHOTTKY BARRIER DIODE
  • Manufacturer: Sangdest Microelectronics
  • Size: 125.40 KB
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Datasheet Summary

Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features : - Metal silicon junction, majority carrier conduction - Guarding for overvoltage protection - Low power loss, high efficiency - High current capability - Low forward voltage drop - High surge capability - For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Mechanical Data: - Case: SOD-123FL molded plastic body - Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 - Polarity: Color band denotes cathode end - Mounting Position: Any Mechanical Dimensions: In mm/Inches 1N5817W-1N5819W Green Products Symbol A B C D E G Millimeters Min Max...