1N5819W Description
Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE.
1N5819W Key Features
- Metal silicon junction, majority carrier conduction
- Guarding for overvoltage protection
- Low power loss, high efficiency
- High current capability
- Low forward voltage drop
- High surge capability
- For use in low voltage, high frequency inverters