1N5819W
Description
The 1N5817W~1N5819W are available in SOD123FL package.
Key Features
- Metal silicon junction, majority carrier conduction
- Guarding for overvoltage protection
- Low power loss, high efficiency
- High current capability
- low forward voltage drop
- High surge capability
- For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
- Available in SOD-123FL package PIN DESCRIPTION REV1.0 - SEP 2021 RELEASED
- 1- AiT Semiconductor Inc. 1N5817W~1N5819W .ait-ic. SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
