KV2001 Datasheet | Microsemi

DESCRIPTION These families of hyperabrupt junction RF varactor diodes feature puter controlled grown junction epitaxy which provides extraordinary consistency and the highest Q available in a 22 Volt hyperabrupt varactor. These series give the designer a full capacitance range of 10 to 500 p F at 3 or 4 volts of bias, depending on product series. They allow octave tuning of LC tanks through 500 MHz. With a reduced 1.5 to 1 frequency ratio, straight-line-frequency tuning over a 3 to 8 volt tuning range is possible. Ultrahigh Q and excellent large signal handling capabilities, along with a 2 to 1 capacitance ratio, is obtained by tuning from 9 to 20 volts of reverse bias. Linear, wide deviation tuning of VCXO/TCXO’S and frequency modulators also results when these diodes are tuned over a 3 to 8 volt bias range. Closely matched sets of all HF-VHF diodes are available along with “A” suffix versions having ±5% capacitance tolerance at 3 or 4 volts of reverse bias depending on series selected. APPLICATIONS These families of hyperabrupt varactors are ideal for wide bandwidth VCOs. They also provide excellent performance in frequency modulators, voltage variable filters, analog phase shifters, TCXOs and VCXOs. ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Value Unit Maximum Working Voltage Storage Temperature TSTG -65 to +150 ºC Operating Temperature -55 to +150 ºC - KV2801 VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction Ro HS pliant KEY FEATURES - Available as packaged devices or as chips for hybrid applications - Octave Tuning Range - Ultrahigh Q - Available with 5% Tolerance CT APPLICATIONS/BENEFITS - Values cover the entire HF / VHV / UHF spectrum; - Highest Q / lowest VCO phase noise - Tough MIL-Spec Si O2 passivation - Dozens of package outlines available KV2001-KV2801 IMPORTANT: For the most current data, consult our website: .MICROSEMI. Specifications are subject to change. Consult factory for the...