Download the KV2601 datasheet PDF.
This datasheet also covers the KV2001 variant, as both devices belong to the same varactor diodes family and are provided as variant models within a single manufacturer datasheet.
General Description
These families of hyperabrupt junction RF varactor diodes feature computer controlled grown junction epitaxy which provides extraordinary consistency and the highest Q available in a 22 Volt hyperabrupt varactor.
Key Features
Available as packaged devices or as chips for hybrid.
Full PDF Text Transcription for KV2601 (Reference)
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KV2601. For precise diagrams, tables, and layout, please refer to the original PDF.
www.MICROSEMI.com ® TM DESCRIPTION These families of hyperabrupt junction RF varactor diodes feature computer controlled grown junction epitaxy which provides extraordina...
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computer controlled grown junction epitaxy which provides extraordinary consistency and the highest Q available in a 22 Volt hyperabrupt varactor. These series give the designer a full capacitance range of 10 to 500 pF at 3 or 4 volts of bias, depending on product series. They allow octave tuning of LC tanks through 500 MHz. With a reduced 1.5 to 1 frequency ratio, straight-line-frequency tuning over a 3 to 8 volt tuning range is possible. Ultrahigh Q and excellent large signal handling capabilities, along with a 2 to 1 capacitance ratio, is obtained by tuning from 9 to 20 volts of reverse bias.
KV2601 Datasheet
