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MG1005, MG1001 Datasheet - Microsemi

MG1005, MG1001, GUNN Diodes

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a varie.
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MG1001-Microsemi.pdf

This datasheet PDF includes multiple part numbers: MG1005, MG1001. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

MG1005, MG1001

Manufacturer:

Microsemi ↗

File Size:

205.73 KB

Description:

GUNN Diodes

Note:

This datasheet PDF includes multiple part numbers: MG1005, MG1001.
Please refer to the document for exact specifications by model.

MG1005 Features

* CW Designs to 500 mW

* Pulsed Designs to 10 W

* Frequency Coverage Specified from 5.9

* 95 GHz

* Low Phase Noise

* High Reliability Applications

* Motion Detectors

* Transmitters and Receivers

* Beacons

* Automotive Collision Avoidance Radars

* Radars

MG1005 Distributors

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📌 All Tags

MG1001 GUNN Diodes Microsemi
Microsemi MG1005-like datasheet
MG1001
MG1002
MG1003
MG1004
MG1006

MG1005 Stock/Price

Distributor
Omega Engineering
FLMG-10050AL
VARIABLE AREA IN-LINE PNEUMATIC FLOW METERS - Bulk (Alt: FLMG-10050AL)
Avnet Americas
0 In Stock
Qty : 1 units
Unit Price : $602.4286