Datasheet Details
| Part number | MG1001 |
|---|---|
| Manufacturer | Microsemi |
| File Size | 205.73 KB |
| Description | GUNN Diodes |
| Datasheet |
 MG1001 Datasheet
|
|
|
| Part number | MG1001 |
|---|---|
| Manufacturer | Microsemi |
| File Size | 205.73 KB |
| Description | GUNN Diodes |
| Datasheet |
MG1001 Datasheet
|
|
|
|
Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process.
The layers are processed using proprietary techniques resulting in low phase and 1/f noise.