MG1009
Description
Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process.
Key Features
- CW Designs to 500 mW
- Pulsed Designs to 10 W
- Frequency Coverage Specified from 5.9–95 GHz
- Low Phase Noise
- High Reliability
Applications
- Motion Detectors
