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MG1009 - GUNN Diodes

This page provides the datasheet information for the MG1009, a member of the MG1001 GUNN Diodes family.

Datasheet Summary

Description

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process.

The layers are processed using proprietary techniques resulting in low phase and 1/f noise.

Features

  • CW Designs to 500 mW.
  • Pulsed Designs to 10 W.
  • Frequency Coverage Specified from 5.9.
  • 95 GHz.
  • Low Phase Noise.
  • High Reliability.

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Datasheet preview – MG1009

Datasheet Details

Part number MG1009
Manufacturer Microsemi
File Size 205.73 KB
Description GUNN Diodes
Datasheet download datasheet MG1009 Datasheet
Additional preview pages of the MG1009 datasheet.

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Full PDF Text Transcription

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® TM Discrete Frequency: Cathode Heatsink GUNN Diodes Cathode Heat Sink MG1001 – MG1060 Features ● CW Designs to 500 mW ● Pulsed Designs to 10 W ● Frequency Coverage Specified from 5.9–95 GHz ● Low Phase Noise ● High Reliability Applications ● Motion Detectors ● Transmitters and Receivers ● Beacons ● Automotive Collision Avoidance Radars ● Radars ● Radiometers ● Instrumentation Description Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5.9– 95 GHz.
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