MG100Q2YS40 Datasheet | Toshiba

TOSHIBA GTR Module Silicon N Channel IGBT High Power Switching applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (Max) trr = 0.5µs (Max) l Low saturation voltage : VCE (sat) = 4.0V (Max) l Enhancement-mode l Includes a plete half bridge in one package. l The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 240g ― ― 2-108A2A Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP IF IFM Tj Tstg VIsol ― Rating 1200 ±20 100 200 100 200 - 40 ~ 125 2500 (AC 1 min.) 3/3 Unit V V A W °C °C V N- m 1 2001-04-16 Electrical Characteristics (Ta = 25°C) Characteristic...