• Part: MG100Q2YS40
  • Manufacturer: Toshiba
  • Size: 193.88 KB
Download MG100Q2YS40 Datasheet PDF
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MG100Q2YS40 Description

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS40 High Power Switching applications Motor Control Applications MG100Q2YS40 Unit: mm l High input impedance l High speed : tf = 0.5µs (Max) trr = 0.5µs (Max) l Low saturation voltage.

MG100Q2YS40 Key Features

  • High input impedance
  • High speed : tf = 0.5µs (Max) trr = 0.5µs (Max)
  • Low saturation voltage : VCE (sat) = 4.0V (Max)
  • Enhancement-mode
  • Includes a plete half bridge in one package
  • The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 240g ― ― 2-108A2A Maxi