MG100Q2YS40 Overview
TOSHIBA GTR Module Silicon N Channel IGBT High Power Switching applications Motor Control Applications MG100Q2YS40 Unit: mm l High input impedance l High speed : tf = 0.5µs (Max) trr = 0.5µs (Max) l Low saturation voltage : VCE (sat) = 4.0V (Max) l Enhancement-mode l Includes a plete half bridge in one package. l The electrodes are isolated from case. 1200 ±20 100 200 100 200 W °C °C V N·m 1 2001-04-16
MG100Q2YS40 Key Features
- High input impedance
- High speed : tf = 0.5µs (Max) trr = 0.5µs (Max)
- Low saturation voltage : VCE (sat) = 4.0V (Max)
- Enhancement-mode
- Includes a plete half bridge in one package
- The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 240g ― ― 2-108A2A Maxi