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MG100Q2YS40

Manufacturer: Toshiba

MG100Q2YS40 datasheet by Toshiba.

MG100Q2YS40 datasheet preview

MG100Q2YS40 Datasheet Details

Part number MG100Q2YS40
Datasheet MG100Q2YS40_ToshibaSemiconductor.pdf
File Size 193.88 KB
Manufacturer Toshiba
Description N-Channel IGBT
MG100Q2YS40 page 2 MG100Q2YS40 page 3

MG100Q2YS40 Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS40 High Power Switching applications Motor Control Applications MG100Q2YS40 Unit: mm l High input impedance l High speed : tf = 0.5µs (Max) trr = 0.5µs (Max) l Low saturation voltage.

MG100Q2YS40 Key Features

  • High input impedance
  • High speed : tf = 0.5µs (Max) trr = 0.5µs (Max)
  • Low saturation voltage : VCE (sat) = 4.0V (Max)
  • Enhancement-mode
  • Includes a plete half bridge in one package
  • The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 240g ― ― 2-108A2A Maxi
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