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MG100Q2YS42 Datasheet N-channel IGBT

Manufacturer: Toshiba

MG100Q2YS42 Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS42 MG100Q2YS42 High Power Switching Applications Motor Control Applications l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l Includes a plete half bridge in one package. l The electrodes are isolated from case. IC ICP IF IFM PC Tj Tstg W °C °C V N·m ― ― 2-109C1A 1 2001-08-16

MG100Q2YS42 Key Features

  • High input impedance
  • High speed : tf = 0.5µs (max) trr = 0.5µs (max)
  • Low saturation voltage : VCE (sat) = 4.0V (max)
  • Enhancement-mode
  • Includes a plete half bridge in one package
  • The electrodes are isolated from case. Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g (typ.) Maximum Ra

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