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MG100Q2YS42

Manufacturer: Toshiba

MG100Q2YS42 datasheet by Toshiba.

MG100Q2YS42 datasheet preview

MG100Q2YS42 Datasheet Details

Part number MG100Q2YS42
Datasheet MG100Q2YS42_ToshibaSemiconductor.pdf
File Size 187.89 KB
Manufacturer Toshiba
Description N-Channel IGBT
MG100Q2YS42 page 2 MG100Q2YS42 page 3

MG100Q2YS42 Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS42 MG100Q2YS42 High Power Switching Applications Motor Control Applications l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l Includes a plete half bridge in one package.

MG100Q2YS42 Key Features

  • High input impedance
  • High speed : tf = 0.5µs (max) trr = 0.5µs (max)
  • Low saturation voltage : VCE (sat) = 4.0V (max)
  • Enhancement-mode
  • Includes a plete half bridge in one package
  • The electrodes are isolated from case. Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g (typ.) Maximum Ra
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