| Part Number | MG1001 Datasheet |
|---|---|
| Manufacturer | Microsemi |
| Overview |
Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using p.
* CW Designs to 500 mW * Pulsed Designs to 10 W * Frequency Coverage Specified from 5.9 *95 GHz * Low Phase Noise * High Reliability Applications * Motion Detectors * Transmitters and Receivers * Beacons * Automotive Collision Avoidance Radars * Radars * Radiometers * Instrumentation Description Mic. |