MG1001 Datasheet and Specifications PDF

The MG1001 is a GUNN Diodes.

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Part NumberMG1001 Datasheet
ManufacturerMicrosemi
Overview Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using p.
* CW Designs to 500 mW
* Pulsed Designs to 10 W
* Frequency Coverage Specified from 5.9
*95 GHz
* Low Phase Noise
* High Reliability Applications
* Motion Detectors
* Transmitters and Receivers
* Beacons
* Automotive Collision Avoidance Radars
* Radars
* Radiometers
* Instrumentation Description Mic.
Part NumberMG1001 Datasheet
DescriptionGaAs Hall
ManufacturerMatrixopto
Overview . .

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Availability and pricing information from multiple distributors.

Seller Inventory Price Breaks Buy
DigiKey 0 1+ : 21.42 USD
10+ : 19.852 USD
25+ : 19.2276 USD
50+ : 18.7586 USD
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Onlinecomponents.com 0 5+ : 20.97 USD
10+ : 20 USD
25+ : 19.4 USD
50+ : 18.84 USD
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Master Electronics 0 5+ : 20.97 USD
10+ : 20 USD
25+ : 19.4 USD
50+ : 18.84 USD
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