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MG100Q2YS50 Datasheet N-channel IGBT

Manufacturer: Toshiba

MG100Q2YS50 Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS50 MG100Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max) l Enhancement-mode l Includes a plete half bridge in one package. l The electrodes are isolated from case.

MG100Q2YS50 Key Features

  • High input impedance
  • High speed : tf = 0.3µs (Max) @Inductive Load
  • Low saturation voltage : VCE (sat) = 3.6V (Max)
  • Enhancement-mode
  • Includes a plete half bridge in one package
  • The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 255g Maximum Ratings (T

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