MG100Q2YS51
MG100Q2YS51 is N-Channel IGBT manufactured by Toshiba.
TOSHIBA GTR Module Silicon N Channel IGBT
High Power Switching Applications Motor Control Applications
Unit: mm l High input impedance l High speed : tf = 0.3µs (Max)
@Inductive load l Low saturation voltage
: VCE (sat) = 3.6V (Max) l Enhancement-mode l Includes a plete half bridge in one package. l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
JEDEC EIAJ TOSHIBA Weight: 430g
Characteristic
Collector-emitter voltage Gate-emitter voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES VGES
IC (25°C / 80°C)
ICP (25°C / 80°C)
IF IFM
Tj Tstg
VIsol
―
Rating
1200 ±20
150 / 100
300 / 200
100 200
- 40 ~ 125
2500 (AC 1 min.)
3/3
Unit V...
