MG100Q2YS51 Overview
TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS51 MG100Q2YS51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max) l Enhancement-mode l Includes a plete half bridge in one package. l The electrodes are isolated from case. W °C °C V N·m ― ― 2-109C4A 1 2001-04-16 MG100Q2YS51
MG100Q2YS51 Key Features
- High input impedance
- High speed : tf = 0.3µs (Max) @Inductive load
- Low saturation voltage : VCE (sat) = 3.6V (Max)
- Enhancement-mode
- Includes a plete half bridge in one package
- The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Wei