MP61003 Datasheet | Microsemi

Features - Low Series Resistance - Fast Switching Speed - Low Capacitance - No Reverse Bias Required - Available in Packages and Bondable Chips - Available as Chip-on-Board ponents Applications - Switches - Attenuators - Phase Shifters Maximum Ratings Reverse Voltage Forward Current Incident Power Operating Temperature Storage Temperature Breakdown Voltage 50 m A @ 25°C +20 d Bm @ 25°C -55°C to +175°C -55°C to +200°C Ga As PIN DIODES MP61001 - MP61012 Description Microsemi’s Ga As PIN diodes are fabricated utilizing a gold contact mesa and protected with silicon nitride. The diodes have short carrier lifetime for fast switching speed and low series resistance. Ga As P00 diodes are available as bondable chips, chip-on-board ponents and in a variety of packages. Ga As PIN diodes, in parison to Si PIN diodes, reach its high impedance state at zero bias and do not require reverse bias for low loss. Nanosecond switching speed is achieved with Ga As PIN diodes, using low-cost TTL drivers. Copyright  2008 Rev: 2009-05-11 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 ® Ga As PIN DIODES MP61001 - MP61012 Ga As PIN Diodes (Packaged and Bondable Chips) Gallium Arsenide PIN Diodes (Specifications @ 25°C) Part Number Max. CJ @ -10 V1 (pf) Min. Breakdown Voltage (V) Max. Resistance @ 20 m A2 () Nominal Switching Speed...