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MP61001 - GaAs PIN DIODES

General Description

Microsemi’s GaAs PIN diodes are fabricated utilizing a gold contact mesa and protected with silicon nitride.

The diodes have short carrier lifetime for fast switching speed and low series resistance.

Key Features

  • Low Series Resistance.
  • Fast Switching Speed.
  • Low Capacitance.
  • No Reverse Bias Required.
  • Available in Packages and Bondable Chips.
  • Available as Chip-on-Board Components.

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TM ® Packaged and Bondable Chips Features ● Low Series Resistance ● Fast Switching Speed ● Low Capacitance ● No Reverse Bias Required ● Available in Packages and Bondable Chips ● Available as Chip-on-Board Components Applications ● Switches ● Attenuators ● Phase Shifters Maximum Ratings Reverse Voltage Forward Current Incident Power Operating Temperature Storage Temperature Breakdown Voltage 50 mA @ 25°C +20 dBm @ 25°C -55°C to +175°C -55°C to +200°C GaAs PIN DIODES MP61001 – MP61012 Description Microsemi’s GaAs PIN diodes are fabricated utilizing a gold contact mesa and protected with silicon nitride. The diodes have short carrier lifetime for fast switching speed and low series resistance.