MRF914 Description
Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching applications. BVCEO Collector-Emitter Breakdown Voltage Value Typ.
MRF914 Key Features
- Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain
- Gmax = 15 dB (typ) @ f = 500 MHz Low Noise Figure NF = 2.5 dB (typ) @ f = 500 MHz High FT
- 4.5 GHz (typ) @ IC = 20 mAdc