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MRF914 - HIGH FREQUENCY TRANSISTOR

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MRF914 CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Peak Total Device Dissipation (a Ta = 75°C Derate above 75°C Storage Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Symbol vCEO v CBO VEBO "C PD Tstg Symbol R ftJA Value 12 20 3.0 40 200 1.6 -65 to +200 Max 625 Unit Vdc Vdc Vdc mAdc mW mW/°C °C Unit °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 1-0 mAdc, Bl = 0) Collector-Base Breakdown Voltage OC = 0.1 mAdc, Ie = 0) Emitter-Base Breakdown Voltage (lg = 0.
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