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MRF917T1 - LOW NOISE HIGH FREQUENCY TRANSISTOR

Features

  • 40 28 19 5 146 124 110 101 94 88 84 79 75 71 55 42 30 20 4 136 114 103 95 89 85 81 77 74 70 56 43 32 22 5 125 106 97 91 86 82 79 75 72 69 56 44 33 24 7 |S12| 0.040 0.066 0.081 0.091 0.098 0.104 0.110 0.117 0.123 0.129 0.167 0.211 0.263 0.321 0.446 0.036 0.057 0.068 0.078 0.086 0.094 0.103 0.112 0.121 0.130 0.179 0.229 0.281 0.335 0.446 0.031 0.045 0.056 0.067 0.078 0.089 0.100 0.112 0.123 0.135 0.192 0.248 0.301 0.352 0.452 0.024 0.037 0.049 0.062 0.075 0.088 0.100 0.113 0.126 0.139 0.201 0.258.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document from RF Marketing The RF Small Signal Line NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers, at frequencies to 1.5 GHz. Specifically aimed at portable communication devices such as pagers and hand–held phones. • Small, Surface–Mount Package (SC–70) • High Current Gain–Bandwidth Product (fτ = 6.0 GHz Typ @ 6.0 V, 20 mA) • Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz • Available in Tape and Reel Packaging. T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel www.DataSheet4U.
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