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MRF9100SR3 - 26 V LATERAL N-CHANNEL RF POWER MOSFETs

Download the MRF9100SR3 datasheet PDF. This datasheet also covers the MRF9100 variant, as both devices belong to the same 26 v lateral n-channel rf power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

22 pF, 100B Chip Capacitors, ATC #100B220GW 2.2 pF, 100B Chip Capacitors, ATC #100B2R2BW 6.8 pF, 100B Chip Capacitor, ATC #100B6R8CW 10 pF, 100B Chip Capacitors, ATC #100B100GW 33 pF, 100B Chip Capacitors, ATC #100B330JW 4.7 pF, 100B Chip Capacitors, ATC #100B4R7BW 2.7 pF, 100B Chip Capacitor, ATC #

Key Features

  • in, output power, drain efficiency and intermodulation distortion. Input Matching Network Device Under Test Output Matching Network Z in Z.
  • OL Figure 11. Series Equivalent Input and Output Impedance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF9100_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF9100 26 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF9100R3 26 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF911 HIGH FREQUENCY TRANSISTOR
MRF912 HIGH FREQUENCY TRANSISTOR
MRF9120LR3 26 V LATERAL N-CHANNEL RF POWER MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9100/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment. • On–Die Integrated Input Match • Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts Output Power, P1dB — 110 Watts (Typ) Power Gain @ P1dB — 16.5 dB (Typ) Efficiency @ P1dB — 53% (Typ) • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness www.DataSheet4U.