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MRF9120LR3 - 26 V LATERAL N-CHANNEL RF POWER MOSFETs

This page provides the datasheet information for the MRF9120LR3, a member of the MRF9120R3 26 V LATERAL N-CHANNEL RF POWER MOSFETs family.

Description

Long Ferrite Beads, Surface Mount Short Ferrite Beads, Surface Mount 68 pF Chip Capacitors, B Case 0.8 - 8.0 pF Variable Capacitors 7.5 pF Chip Capacitor, B Case 3.3 pF Chip Capacitor, B Case 11 pF Chip Capacitors, B Case 51 pF Chip Capacitors, B Case 6.2 pF Chip Capacitors, B Case 4.7 pF Chip Capac

Features

  • UT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power 18 60 Gps 50 40 30 20 η 8 6 VDD = 26 Vdc IDQ = 2 x 500 mA f = 880 MHz 10 Pout, OUTPUT POWER (WATTS) AVG. 100 10 0 1 h, DRAIN.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9120/D The RF MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 500 mA IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 26 Watts Power Gain — 16 dB Efficiency — 26% Adjacent Channel Power — 750 kHz: - 45 dBc @ 30 kHz BW www.DataSheet4U.com 1.
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