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MRF9120LR3 - RF Power MOSFET

Key Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters.
  • Integrated ESD Protection.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF9120 Rev. 10, 5/2006 MRF9120LR3 880 MHz, 120 W, 26 V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1000 mA IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) ąOutput Power — 26 Watts ąPower Gain — 16 dB ąEfficiency — 26% ąAdjacent Channel Power — ąą750 kHz: -45 dBc in 30 kHz BW ąą1.