MRF9120LR3 Overview
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband mercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, mon source amplifier applications in 26 volt base station equipment. Typical...
MRF9120LR3 Key Features
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Excellent Thermal Stability
- Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
- Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc)
- Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc)
- On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 200 μAdc)
