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MS1226 - RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

General Description

The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications.

This device utilizes emitter ballasting for improved ruggedness and reliability.

Key Features

  • 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 www.DataSheet4U.com MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-base Voltage Collector-emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 36 4.0 4.