MS1226 datasheet by Advanced Power Technology.
| Part number | MS1226 |
|---|---|
| Datasheet | MS1226_AdvancedPowerTechnology.pdf |
| File Size | 429.16 KB |
| Manufacturer | Advanced Power Technology |
| Description | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
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The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB munications. This device utilizes emitter ballasting for improved ruggedness and reliability. MS1226 STATIC ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol BVcbo BVces BVceo BVebo Icbo HFE IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5 V Test Conditions Min.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MS1226 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS | Microsemi |
View all Advanced Power Technology datasheets
| Part Number | Description |
|---|---|
| MS1227 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
| MS1251 | RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS |
| MS1252 | RF AND MICROWAVE TRANSISTORS HF - VHF COMMUNICATION APPLICATIONS |
| MS1253 | RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS |
| MS1261 | RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS |
| MS1262 | RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS |
| MS1263 | RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS |
| MS1281 | RF & Microwave Transistors FM Broadcast Applications |
| MS1000 | RF & MICROWAVE TRANSISTORS |
| MS1001 | RF & MICROWAVE TRANSISTORS |
