MS1226 Description
The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB munications. This device utilizes emitter ballasting for improved ruggedness and reliability. MS1226 STATIC ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol BVcbo BVces BVceo BVebo Icbo HFE IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5 V Test Conditions Min.