MS1226 Description
The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB munications. This device utilizes emitter ballasting for improved ruggedness and reliability. MS1226 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol BVcbo BVces BVceo BVebo Icbo HFE IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5 V Test Conditions Min.
MS1226 Key Features
- 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM MON EMITTER CONFIGURATION