MSC2X101SDA070J - Dual Silicon Carbide Schottky Barrier Diodes

Microsemi (Microchip)

Features

The following are key features of the MSC2X101SDA070J and MSC2X100SDA070J devices:.
No reverse recovery.
Low forward voltage.
Low leakage current.
Avalanche-energy rated.
RoHS compliant.
Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X101SDA070J and MSC2X100SDA070J devices:.
High switching frequency.
Low switching losses.
Low noise (EMI) switching.
Higher reliability systems.

MSC2X101SDA070J dual silicon carbide schottky barrier diodes by Microsemi - Datasheet Preview

Datasheet Details

Part number	MSC2X101SDA070J
Manufacturer	Microsemi (Microchip)
File Size	922.26 KB
Description	Dual Silicon Carbide Schottky Barrier Diodes
Datasheet	MSC2X101SDA070J Datasheet

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Other Datasheets by Microsemi (Microchip)

Part Number	Description
MSC2X101SDA120J	Dual Silicon Carbide Schottky Barrier Diode
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Full PDF Text Transcription

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MSC2X101/100SDA070J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X101/100SDA070J are dual 700 V, 100 A SiC SBD devices in a SOT-227 package.

Published: Feb 12, 2024 |