MSC2X30SDA070J
MSC2X30SDA070J is Dual Silicon Carbide Schottky Barrier Diodes manufactured by Microsemi.
- Part of the MSC2X31SDA070J comparator family.
- Part of the MSC2X31SDA070J comparator family.
Overview
The silicon carbide (Si C) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X31/30SDA070J are dual 700 V, 30 A Si C SBD devices in a SOT-227 package.
Figure 1
- Parallel MSC2X31SDA070J
Figure 2
- Anti-parallel MSC2X30SDA070J
Features
The following are key features of the MSC2X31SDA070J and MSC2X30SDA070J devices:
- No reverse recovery
- Low forward voltage
- Low leakage current
- Avalanche-energy rated
- Ro HS pliant
- Isolated voltage to 2500 V
Benefits
The following are benefits of the MSC2X31SDA070J and MSC2X30SDA070J devices:
- Outstanding performance at high-frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction-to-case thermal resistance
- Ro HS pliant
053-4104 MSC2X31/30SDA070J Datasheet Revision A
Product Overview
Applications
The MSC2X31SDA070J and MSC2X30SDA070J devices are designed for the following applications:
- Power factor correction (PFC)
- Anti-parallel diode
◦ Switch-mode power supply ◦ Inverters/converters ◦ Motor controllers
- Freewheeling diode ◦ Switch-mode power supply ◦ Inverters/converters
- Snubber/clamp diode
053-4104 MSC2X31/30SDA070J Datasheet Revision A
Device Specifications
Device Specifications
This section shows the specifications of the MSC2X31SDA070J and MSC2X30SDA070J devices.
Absolute Maximum Ratings
The following table shows the absolute maximum ratings per diode of the MSC2X31SDA070J and MSC2X30SDA070J devices. TC = 25 °C unless otherwise specified. Table 1
- Absolute Maximum Ratings
Symbol
Parameter...
