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MSC2X30SDA170J Datasheet Dual Silicon Carbide Schottky Barrier Diodes

Manufacturer: Microsemi (now Microchip Technology)

Overview: MSC2X31/30SDA170J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X31/30SDA170J are dual 1700 V, 30 A SiC SBD devices in a SOT-227 package.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • The following are key features of the MSC2X31SDA170J and MSC2X30SDA170J devices:.
  • No reverse recovery.
  • Low forward voltage.
  • Low leakage current.
  • Avalanche-energy rated.
  • RoHS compliant.
  • Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X31SDA170J and MSC2X30SDA170J devices:.
  • Outstanding performance at high-frequency operation.
  • Direct mounting to heatsink (isolated package).
  • Low junction-to-cas.

More Datasheets from Microsemi (now Microchip Technology)

Part Number Description
MSC2X30SDA120J Dual Silicon Carbide Schottky Barrier Diodes
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MSC2X31SDA120J Dual Silicon Carbide Schottky Barrier Diodes
MSC2X31SDA170J Dual Silicon Carbide Schottky Barrier Diodes
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MSC2X100SDA120J Dual Silicon Carbide Schottky Barrier Diode
MSC2X101SDA070J Dual Silicon Carbide Schottky Barrier Diodes
MSC2X101SDA120J Dual Silicon Carbide Schottky Barrier Diode
MSC2X50SDA070J Dual Silicon Carbide Schottky Barrier Diodes

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