MSC2X31SDA070J Overview
MSC2X31/30SDA070J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X31/30SDA070J are dual 700 V, 30 A SiC SBD devices in a SOT-227 package. Figure 1 Parallel MSC2X31SDA070J Figure 2...
MSC2X31SDA070J Key Features
- No reverse recovery
- Low forward voltage
- Low leakage current
- Avalanche-energy rated
- RoHS pliant
- Isolated voltage to 2500 V
- Outstanding performance at high-frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction-to-case thermal resistance
- RoHS pliant