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MSC2X31SDA120J - Dual Silicon Carbide Schottky Barrier Diodes

MSC2X31SDA120J Description

MSC2X31/30SDA120J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product l.

MSC2X31SDA120J Features

* The following are key features of the MSC2X31SDA120J and MSC2X30SDA120J devices:
* No reverse recovery
* Low forward voltage
* Low leakage current
* Avalanche-energy rated
* RoHS compliant
* Isolated voltage to 2500 V Benefits The following are benefit

MSC2X31SDA120J Applications

* MSC2X31/30SDA120J are dual 1200 V, 30 A SiC SBD devices in a SOT-227 package. Figure 1
* Parallel MSC2X31SDA120J Figure 2

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Dual Silicon Carbide Schottky Barrier Diodes Microsemi
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