MSC2X31SDA170J
Overview
The silicon carbide (Si C) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X31/30SDA170J are dual 1700 V, 30 A Si C SBD devices in a SOT-227 package.
Figure 1
- Parallel MSC2X31SDA170J
Figure 2
- Anti-parallel MSC2X30SDA170J
Features
The following are key features of the MSC2X31SDA170J and MSC2X30SDA170J devices:
- No reverse recovery
- Low forward voltage
- Low leakage current
- Avalanche-energy rated
- Ro HS pliant
- Isolated voltage to 2500 V
Benefits
The following are benefits of the MSC2X31SDA170J and MSC2X30SDA170J devices:
- Outstanding performance at high-frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction-to-case thermal resistance
- Ro HS pliant
053-4110 MSC2X31/30SDA170J Datasheet Revision A
Product Overview
Applications
The MSC2X31SDA170J and MSC2X30SDA170J devices are designed for...
