MSC2X51SDA170J
MSC2X51SDA170J is Dual Silicon Carbide Schottky Barrier Diodes manufactured by Microsemi.
MSC2X51/50SDA170J Dual Silicon Carbide Schottky Barrier Diodes
Product Overview
The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X51/50SDA170J are dual 1700 V, 50 A SiC SBD devices in a SOT-227 package.
Figure 1
- Parallel MSC2X51SDA170J
Figure 2
- Anti-parallel MSC2X50SDA170J
Features
The following are key Features of the MSC2X51SDA170J and MSC2X50SDA170J devices:
- No reverse recovery
- Low forward voltage
- Low leakage current
- Avalanche-energy rated
- RoHS pliant
- Isolated voltage to 2500 V
Benefits
The...
