2729-170 Datasheet | Microsemi

DESCRIPTION The 2729-170 is an internally matched, MON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100µs pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of Pulsed Automated Load Pull. This hermetically solder-sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55KS-1 mon Base ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 570 W Device Dissipation @ 25°C1 Maximum Voltage and Current Collector to Base Voltage (BVces) 65 Emitter to Base Voltage (BVebo) 3.0 Collector Current (Ic) 17 A Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 .. °C °C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL Pout Pin Pg ηc VSWR CHARACTERISTICS Power Output Power Input Power Gain Collector Efficiency Load Mismatch Tolerance1 TEST CONDITIONS F=2700-2900 MHz Vcc = 38 Volts Pulse Width = 100 µs Duty Factor = 10% F = 2900 MHz, Po = 170 W MIN 170 25.7 8.2 52 8.6 60 2:1 TYP MAX UNITS W W d B % FUNCTIONAL CHARACTERISTICS @ 25°C BVebo Iebo BVces Ices h FE θjc Emitter to Base Breakdown Emitter to Base Leakage Collector to Emitter Breakdown Collector to Emitter Leakage DC - Current Gain Thermal Resistance 1. At rated output power and pulse conditions Ie = 30 m A Veb = 1.5 V Ic = 120 m A Vce = 36 V Vce = 5V, Ic = 600 m A 3.0 2 56 18 65 7 50 0.30 V m A V m A °C/W NOTE: Issue April 2005 MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT .MICROSEMI. OR CONTACT OUR FACTORY DIRECTLY. 2729-170R4 Vcc = 38 Volts, Pulse Width = 100µs, Duty = 10 % G2754-2, Product is in characterization, additional curves will be inserted at the conclusion. Pout vs. Pin Efficiency vs Power Out 70.0 60.0 50.0 6 Efficiency...