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2N3740A - Medium Power PNP Transistors

Datasheet Summary

Description

These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process.

This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas.

Features

  • Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Low Collector Cutoff Current: 100 nA (Max) 2N3740A Medium Power PNP Transistors.

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Datasheet preview – 2N3740A

Datasheet Details

Part number 2N3740A
Manufacturer Microsemi Corporation
File Size 62.38 KB
Description Medium Power PNP Transistors
Datasheet download datasheet 2N3740A Datasheet
Additional preview pages of the 2N3740A datasheet.

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Full PDF Text Transcription

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7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 APPLICATIONS: • • • 2N3740A Drivers Switches Medium-Power Amplifiers FEATURES: • • • • • Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Low Collector Cutoff Current: 100 nA (Max) 2N3740A Medium Power PNP Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas.
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