2N5667S Datasheet | Microsemi

TECHNICAL DATA NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 Devices 2N5664 2N5665 Qualified Level JAN JANTX JANTXV Devices 2N5666 2N5666S 2N5667 2N5667S Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current 2N5664 2N5665 Symbol 2N5666, S 2N5667, S Unit VCEO VCBO VEBO IB IC 200 250 6.0 1.0 5.0 2N5664 2N5666, S 2N5665 2N5667, S 2.5 (1) 1.2 (2) (3) 30 15 (4) -65 to +200 300 400 Vdc Vdc Vdc Adc Adc TO-66- (TO-213AA) 2N5664, 2N5665 @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 1) Derate linearly 14.3 m W/0C for TA > +250C 2) Derate linearly 6.9 m W/0C for TA > +250C 3) Derate linearly 300 m W/0C for TC >+1000C 4) Derate linearly 150 m W/0C for TC > +1000C Total Power Dissipation PT TJ, Tstg W W 0 C TO-5- 2N5666, 2N5667 TO-39- (TO-205AD) 2N5666S, 2N5667S - See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 m Adc Emitter-Base Breakdown Voltage IE = 10 µAdc Collector-Emitter Cutoff Current VCE = 200 Vdc VCE = 300 Vdc 2N5664, 2N5666, S 2N5665, 2N5667, S V(BR)CER 250 400 6.0 0.2 0.2 Vdc V(BR)EBO 2N5664, 2N5666, S 2N5665, 2N5667, S ICES Vdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N5664, 2N5665, 2N5666, 2N5666S, 2N5667, 2N5667S JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Collector-Base Cutoff Current VCB = 200 Vdc VCB = 250 Vdc VCB = 300 Vdc VCB = 400 Vdc Symbol 2N5664, 2N5666, S ICBO 2N5665, 2N5667, S Min. Max. 0.1 1.0 0.1 1.0 Unit µAdc m Adc µAdc m Adc ON CHARACTERISTICS (5) Forward-Current Transfer Ratio IC = 0.5 Adc, VCE = 2.0 Vdc IC = 1.0 Adc, VCE = 5.0 Vdc IC = 3.0 Adc, VCE = 5.0 Vdc IC = 5.0 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 3.0 Adc, IB =...