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  Microsemi Electronic Components Datasheet  

2N5667S Datasheet

NPN POWER SILICON SWITCHING TRANSISTOR

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TECHNICAL DATA
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
Devices
2N5664 2N5665
Qualified Level
JAN
JANTX
JANTXV
Devices
2N5666 2N5667
2N5666S 2N5667S
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C
@ TC = +1000C
Operating & Storage Junction Temperature Range
1) Derate linearly 14.3 mW/0C for TA > +250C
2) Derate linearly 6.9 mW/0C for TA > +250C
3) Derate linearly 300 mW/0C for TC >+1000C
4) Derate linearly 150 mW/0C for TC > +1000C
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
TJ, Tstg
2N5664 2N5665
2N5666, S 2N5667, S Unit
200 300 Vdc
250 400 Vdc
6.0 Vdc
1.0 Adc
5.0 Adc
2N5664 2N5666, S
2N5665
2.5 (1)
30 (3)
2N5667, S
1.2 (2)
15 (4)
W
W
-65 to +200
0C
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
2N5664, 2N5666, S
2N5665, 2N5667, S
V(BR)CER
Emitter-Base Breakdown Voltage
IE = 10 µAdc
V(BR)EBO
Collector-Emitter Cutoff Current
VCE = 200 Vdc
2N5664, 2N5666, S
ICES
VCE = 300 Vdc
2N5665, 2N5667, S
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Min.
250
400
6.0
TO-66* (TO-213AA)
2N5664, 2N5665
TO-5*
2N5666, 2N5667
TO-39* (TO-205AD)
2N5666S, 2N5667S
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
0.2 µAdc
0.2
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N5667S Datasheet

NPN POWER SILICON SWITCHING TRANSISTOR

No Preview Available !

2N5664, 2N5665, 2N5666, 2N5666S, 2N5667, 2N5667S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Collector-Base Cutoff Current
VCB = 200 Vdc
2N5664, 2N5666, S
VCB = 250 Vdc
VCB = 300 Vdc
2N5665, 2N5667, S
VCB = 400 Vdc
ON CHARACTERISTICS (5)
Forward-Current Transfer Ratio
IC = 0.5 Adc, VCE = 2.0 Vdc
2N5664, 2N5666, S
2N5665, 2N5667, S
IC = 1.0 Adc, VCE = 5.0 Vdc
2N5664, 2N5666, S
2N5665, 2N5667, S
IC = 3.0 Adc, VCE = 5.0 Vdc
2N5664, 2N5666, S
2N5665, 2N5667, S
IC = 5.0 Adc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
All Types
IC = 3.0 Adc, IB = 0.3 Adc
2N5664, 2N5666, S
IC = 3.0 Adc, IB = 0.6 Adc
2N5665, 2N5667, S
IC = 5.0 Adc, IB = 1.0 Adc
Base-Emitter Saturation Voltage
All Types
IC = 3.0 Adc, IB = 0.3 Adc
2N5664, 2N5666, S
IC = 3.0 Adc, IB = 0.6 Adc
2N5665, 2N5667, S
IC = 5.0 Adc, IB = 1.0 Adc
All Types
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 5.0 Vdc, f = 10 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 100 Vdc; IC = 1.0 Adc; IB1 = 30 mAdc
Turn-Off Time
VCC = 30 Vdc; IC = 1.0 Adc; IB1 = -IB2 = 50 mAdc
2N5664, 2N5666, S
2N5665, 2N5667, S
SAFE OPERATING AREA
DC Tests (2N5664 and 2N5665 only)
TC = 1000C, 1 Cycle, t 1.0 s, tr + tf = 10 µs
Test 1
VCE = 6.0 Vdc, IC = 5.0 Adc
2N5664 and 2N5665
VCE = 3.0 Vdc, IC = 5.0 Adc
Test 2
2N5666 and 2N5667
VCE = 40 Vdc, IC = 0.75 Adc
2N5664 and 2N5665
VCE = 37.5 Vdc, IC = 0.4 Adc
Test 3
2N5666 and 2N5667
VCE = 200 Vdc, IC = 43 mAdc
2N5664
VCE = 200 Vdc, IC = 27 mAdc
Test 4
2N5666
VCE = 300 Vdc, IC = 21 mAdc
2N5665
VCE = 300 Vdc, IC = 14 mAdc
2N5667
(5) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
ICBO
hFE
VCE(sat)
VBE(sat)
hfe
Cobo
ton
toff
Min.
40
25
40
25
15
10
5.0
2.0
Max.
0.1
1.0
0.1
1.0
120
75
0.4
0.4
1.0
1.2
1.2
1.5
7.0
120
0.25
1.5
2.0
Unit
µAdc
mAdc
µAdc
mAdc
Vdc
Vdc
pF
µs
µs
120101
Page 2 of 2


Part Number 2N5667S
Description NPN POWER SILICON SWITCHING TRANSISTOR
Maker Microsemi Corporation
Total Page 2 Pages
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