VPT 2N5667
2N5666 is available in the surface mount U3 version Rev. For further information and support please visit: info@vptcomponents.com 2N5664, 2N5665, 2N5666, 2N5667 NPN High Voltage Power Silicon Transistor Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min.| Part No. | 2N5667 |
|---|---|
| Datasheet | 2N5667 Download |
| Manufacturer |  VPT |
| Description | NPN High Voltage Power Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/455● 2N5664 and 2N5665 available in TO-66 package
● 2N5666 and 2N5667 are available in both TO-5 and TO-39 packages
● V1
ELECTRICAL CHARACTERISTICS
(TA = +25oC unless otherwise specified) Parameter Breakdown Voltage Collector - Emitter Test Conditions IC = 10 mA dc, R1 = 100 Ω 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S Symbol Units Min. Max. V(BR)CER V dc 250 — 400 Breakdown Voltage Emitter - Base IE = 10 mA dc V(BR)EBO V dc 6 — Collector - Emitter Cutoff Current VCE = 200 V dc 2N5664, 2N5666, 2N5666S VCE = 300 V dc 2N5665, 2N5667, 2N5667S ICES1 µA dc — 0.2 VCB = 200 Vdc 2N5664, 2N5666, 2N5666S µA dc 0.1 Collector - Base Cutoff Current VCB = 250 Vdc 2N5664, 2N5666, 2N5666S VCB = 300 V dc 2N5665, 2N5667, 2N5667S ICBO mA dc µA dc — 1.0 0.1 VCB = 400 V dc 2N5665, 2N5667, 2N5667S mA dc 1.0 Forward - Current Transfer Ratio Forward - Current Transfer Ratio Forward - Current Transfer Ratio VCE = 2 V dc, IC = 0.
