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2N5667 - NPN High Voltage Power Silicon Transistor

Download the 2N5667 datasheet PDF. This datasheet also covers the 2N5664 variant, as both devices belong to the same npn high voltage power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/455.
  • 2N5664 and 2N5665 available in TO-66 package.
  • 2N5666 and 2N5667 are available in both TO-5 and TO-39 packages.
  • 2N5666 is available in the surface mount U3 version Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Breakdown Voltage Collector - Emitter Test Conditions IC = 10 mA dc, R1 = 100 Ω 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S Symbol Unit.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5664-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5667
Manufacturer VPT
File Size 670.52 KB
Description NPN High Voltage Power Silicon Transistor
Datasheet download datasheet 2N5667 Datasheet

📁 Similar Datasheet

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2N5667S NPN POWER SILICON SWITCHING TRANSISTOR Microsemi Corporation
2N5660 NPN POWER SILICON TRANSISTOR Microsemi Corporation

Other Datasheets by VPT

Part Number Description
2N5664 NPN High Voltage Power Silicon Transistor
2N5665 NPN High Voltage Power Silicon Transistor
2N5666 NPN High Voltage Power Silicon Transistor
2N5671 NPN High Power Silicon Transistor
2N5672 NPN High Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N5664, 2N5665, 2N5666, 2N5667 NPN High Voltage Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/455 • 2N5664 and 2N5665 available in TO-66 package • 2N5666 and 2N5667 are available in both TO-5 and TO-39 packages • 2N5666 is available in the surface mount U3 version Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Breakdown Voltage Collector - Emitter Test Conditions IC = 10 mA dc, R1 = 100 Ω 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S Symbol Units Min. Max. V(BR)CER V dc 250 — 400 Breakdown Voltage Emitter - Base IE = 10 mA dc V(BR)EBO V dc 6 — Collector - Emitter Cutoff Current VCE = 200 V dc 2N5664, 2N5666, 2N5666S VCE = 300 V dc 2N5665, 2N5667, 2N5667S ICES1 µA dc — 0.